Simultaneous measurements of nuclear-spin heat capacity, temperature, and relaxation in GaAs microstructures

Temperature dependence of dynamic nuclear polarization and its effect on electron spin relaxation and dephasing in InAs/GaAs quantum dots

Temperature dependence of dynamic nuclear polarization and its effect on electron spin

Low-Temperature Nuclear Spin±Lattice Relaxation in Amorphous Materials

The low temperature nuclear spin±lattice relaxation mechanism caused by the effective interaction between nuclear spins and two-level systems (TLS), arising from a paramagnetic centre interaction with TLS by means of g-factor modulation and the electron±nuclear dipole±dipole interaction, is investigated. It is shown, that this mechanism of the nuclear spin±lattice relaxation is effective under ...

Spin relaxation in GaAs(110) quantum wells

Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well

Temperature and carrier density-dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetries have been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically designed GaAs QW comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on spin r...

Breakdown of the Korringa law of nuclear spin relaxation in metallic GaAs.

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T(1) times agree very well with NMR data available for T>1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sublinear temperature dependence T(...